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| FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET May 2006 May 2006 FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 Drain Source D1 D2 G3 Bottom Drain Contact Features * -6.6 A, -20V. rDS(ON) = 42 m @ VGS = -4.5V rDS(ON) = 58 m @ VGS = -2.5V rDS(ON) = 98 m @ VGS = -1.8V * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm 6D 5D 4S MicroFET 2x2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 8 (Note 1a) Units V V A W C -6.6 -24 2.4 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 52 145 C/W Package Marking and Ordering Information Device Marking 291 Device FDMA291P Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDMA291P Rev B (W) FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions ID = -250 A VGS = 0 V, ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 8 V, VGS = 0 V VDS = 0 V Min Typ Max Units -20 -12 -1 100 V mV/C A nA Off Characteristics On Characteristics VGS(th) VGS(th) TJ rDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A VDS = VGS, ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -6.6 A VGS = -2.5 V, ID = -5.1 A VGS = -1.8 V, ID = -3.9 A VGS= -4.5 V, ID = -6.6 A, TJ=125C VDS = -5 V, ID = -6.6 A -0.4 -0.7 3 36 51 79 49 16 -1.0 V mV/C 42 58 98 64 m gFS Forward Transconductance S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, f = 1.0 MHz V GS = 0 V, 1000 190 100 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 13 9 42 25 23 18 68 40 14 ns ns ns ns nC nC nC VDS = -10 V, VGS = -4.5 V ID = -6.6 A, 10 2 3 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -2 A IF = -6.6 A, dIF/dt = 100 A/s (Note 2) -2 -0.8 20 8 -1.2 A V ns nC Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. 2 (a) RJA = 52C/W when mounted on a 1in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RJA = 145C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDMA291P Rev B (W) FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET Typical Characteristics 24 VGS = -4.5V 2.6 -2.5V 20 -ID, DRAIN CURRENT (A) 16 -4.0V -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V VGS = -1.8V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V -2.0V 12 -2.0V 8 4 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) -1.8V 5 0 4 8 12 16 -ID, DRAIN CURRENT (A) 20 24 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.15 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -6.6A VGS = -10V ID = -3.3A 1.4 0.12 1.2 0.09 TA = 125 C o 1 0.06 TA = 25oC 0.8 0.03 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 24 VDS = -10V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 20 -ID, DRAIN CURRENT (A) TA = -55oC 125oC -IS, REVERSE DRAIN CURRENT (A) 10 16 25 C o 1 12 8 4 0 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) 4 0.1 TA = 125 C o 0.01 25oC -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA291P Rev B (W) FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -6.6A VDS = -5V -15V 1600 f = 1MHz VGS = 0 V 8 -10V 6 CAPACITANCE (pF) 1200 Ciss 800 4 Coss 400 2 Crss 0 0 4 8 12 16 Qg, GATE CHARGE (nC) 20 24 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 1000 100 -ID, DRAIN CURRENT (A) 10 1 0.1 0.01 RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics. 80 SINGLE PULSE RJA = 145C/W TA = 25C 60 10s DC VGS = -10V SINGLE PULSE RJA = 145oC/W TA = 25 C o 40 20 0.001 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 1000 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA =145 C/W P(pk) 0.01 0.1 0.1 0.05 0.02 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA291P Rev B (W) FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET FDMA291P Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) FASTrTM ActiveArrayTM FPSTM BottomlessTM FRFETTM Build it NowTM GlobalOptoisolatorTM CoolFETTM GTOTM CROSSVOLTTM HiSeCTM DOMETM I2CTM EcoSPARKTM i-LoTM E2CMOSTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production |
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